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Photo Mfr. Part # Availability Price Quantity Datasheet Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
C3M0021120K

C3M0021120K

SICFET N-CH 1200V 100A TO247-4L

Wolfspeed, Inc.

5,065 36.93
- +

RFQ

C3M0021120K

Datasheet

Tube C3M™ Active N-Channel SiCFET (Silicon Carbide) 1200 V 100A (Tc) 15V 28.8mOhm @ 50A, 15V 3.6V @ 17.7mA 162 nC @ 15 V +15V, -4V 4818 pF @ 1000 V - 469W (Tc) -40°C ~ 175°C (TJ) Through Hole
C3M0021120D

C3M0021120D

SICFET N-CH 1200V 100A TO247-3

Wolfspeed, Inc.

2,372 36.93
- +

RFQ

C3M0021120D

Datasheet

Tube C3M™ Active N-Channel SiCFET (Silicon Carbide) 1200 V 100A (Tc) 15V 28.8mOhm @ 50A, 15V 3.6V @ 17.7mA 160 nC @ 15 V +15V, -4V 4818 pF @ 1000 V - 469W (Tc) -40°C ~ 175°C (TJ) Through Hole
C3M0030090K

C3M0030090K

SICFET N-CH 900V 63A TO247-4

Wolfspeed, Inc.

4,934 39.38
- +

RFQ

C3M0030090K

Datasheet

Tube C3M™ Active N-Channel SiCFET (Silicon Carbide) 900 V 63A (Tc) 15V 39mOhm @ 35A, 15V 3.5V @ 11mA 87 nC @ 15 V +15V, -4V 1864 pF @ 600 V - 149W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTX46N50L

IXTX46N50L

MOSFET N-CH 500V 46A PLUS247-3

IXYS

1,140 45.73
- +

RFQ

IXTX46N50L

Datasheet

Tube Linear Active N-Channel MOSFET (Metal Oxide) 500 V 46A (Tc) 20V 160mOhm @ 500mA, 20V 6V @ 250µA 260 nC @ 15 V ±30V 7000 pF @ 25 V - 700W (Tc) -55°C ~ 150°C (TJ) Through Hole
C2M0040120D

C2M0040120D

SICFET N-CH 1200V 60A TO247-3

Wolfspeed, Inc.

2,114 45.81
- +

RFQ

C2M0040120D

Datasheet

Tube Z-FET™ Not For New Designs N-Channel SiCFET (Silicon Carbide) 1200 V 60A (Tc) 20V 52mOhm @ 40A, 20V 2.8V @ 10mA 115 nC @ 20 V +25V, -10V 1893 pF @ 1000 V - 330W (Tc) -55°C ~ 150°C (TJ) Through Hole
C3M0015065D

C3M0015065D

SICFET N-CH 650V 120A TO247-3

Wolfspeed, Inc.

820 45.82
- +

RFQ

C3M0015065D

Datasheet

Tube C3M™ Active N-Channel SiCFET (Silicon Carbide) 650 V 120A (Tc) 15V 21mOhm @ 55.8A, 15V 3.6V @ 15.5mA 188 nC @ 15 V +15V, -4V 5011 pF @ 400 V - 416W (Tc) -40°C ~ 175°C (TJ) Through Hole
SCT3030KLHRC11

SCT3030KLHRC11

SICFET N-CH 1200V 72A TO247N

Rohm Semiconductor

779 80.76
- +

RFQ

SCT3030KLHRC11

Datasheet

Tube Automotive, AEC-Q101 Active N-Channel SiCFET (Silicon Carbide) 1200 V 72A (Tc) 18V 39mOhm @ 27A, 18V 5.6V @ 13.3mA 131 nC @ 18 V +22V, -4V 2222 pF @ 800 V - 339W 175°C (TJ) Through Hole
C2M0025120D

C2M0025120D

SICFET N-CH 1200V 90A TO247-3

Wolfspeed, Inc.

7,165 81.14
- +

RFQ

C2M0025120D

Datasheet

Tube Z-FET™ Not For New Designs N-Channel SiCFET (Silicon Carbide) 1200 V 90A (Tc) 20V 34mOhm @ 50A, 20V 2.4V @ 10mA 161 nC @ 20 V +25V, -10V 2788 pF @ 1000 V - 463W (Tc) -55°C ~ 150°C (TJ) Through Hole
C3M0016120K

C3M0016120K

SICFET N-CH 1.2KV 115A TO247-4

Wolfspeed, Inc.

584 82.06
- +

RFQ

C3M0016120K

Datasheet

Tube C3M™ Active N-Channel SiCFET (Silicon Carbide) 1200 V 115A (Tc) 15V 22.3mOhm @ 75A, 15V 3.6V @ 23mA 211 nC @ 15 V +15V, -4V 6085 pF @ 1000 V - 556W (Tc) -40°C ~ 175°C (TJ) Through Hole
C2M0045170P

C2M0045170P

SICFET N-CH 1700V 72A TO247-4

Wolfspeed, Inc.

2,435 93.00
- +

RFQ

C2M0045170P

Datasheet

Tube C2M™ Not For New Designs N-Channel SiCFET (Silicon Carbide) 1700 V 72A (Tc) 20V 59mOhm @ 50A, 20V 4V @ 18mA 188 nC @ 20 V +25V, -10V 3672 pF @ 1000 V - 520W (Tc) -40°C ~ 150°C (TJ) Through Hole
APT60M60JFLL

APT60M60JFLL

MOSFET N-CH 600V 70A ISOTOP

Microchip Technology

248 96.63
- +

RFQ

APT60M60JFLL

Datasheet

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 600 V 70A (Tc) 10V 60mOhm @ 35A, 10V 5V @ 5mA 289 nC @ 10 V ±30V 12630 pF @ 25 V - 694W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
SCT3017ALHRC11

SCT3017ALHRC11

SICFET N-CH 650V 118A TO247N

Rohm Semiconductor

320 131.29
- +

RFQ

SCT3017ALHRC11

Datasheet

Tube Automotive, AEC-Q101 Active N-Channel SiCFET (Silicon Carbide) 650 V 118A (Tc) 18V 22.1mOhm @ 47A, 18V 5.6V @ 23.5mA 172 nC @ 18 V +22V, -4V 2884 pF @ 500 V - 427W 175°C (TJ) Through Hole
FBG20N18BC

FBG20N18BC

GAN FET HEMT200V18A COTS 4FSMD-B

EPC Space, LLC

2,590 313.40
- +

RFQ

Tray - Active N-Channel GaNFET (Gallium Nitride) 200 V 18A (Tc) 5V 26mOhm @ 18A, 5V 2.5V @ 3mA 6 nC @ 5 V +6V, -4V 900 pF @ 100 V - - -55°C ~ 150°C (TJ) Surface Mount
FBG10N30BC

FBG10N30BC

GAN FET HEMT100V30A COTS 4FSMD-B

EPC Space, LLC

2,189 313.40
- +

RFQ

Tray - Active N-Channel GaNFET (Gallium Nitride) 100 V 30A (Tc) 5V 9mOhm @ 30A, 5V 2.5V @ 5mA 11 nC @ 5 V +6V, -4V 1000 pF @ 50 V - - -55°C ~ 150°C (TJ) Surface Mount
IXFK210N30X3

IXFK210N30X3

MOSFET N-CH 300V 210A TO264

IXYS

107 33.68
- +

RFQ

IXFK210N30X3

Datasheet

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 300 V 210A (Tc) 10V 5.5mOhm @ 105A, 10V 4.5V @ 8mA 375 nC @ 10 V ±20V 24200 pF @ 25 V - 1250W (Tc) -55°C ~ 150°C (TJ) Through Hole
TW070J120B,S1Q

TW070J120B,S1Q

SICFET N-CH 1200V 36A TO3P

Toshiba Semiconductor and Storage

125 33.97
- +

RFQ

Tube - Active N-Channel SiCFET (Silicon Carbide) 1200 V 36A (Tc) 20V 90mOhm @ 18A, 20V 5.8V @ 20mA 67 nC @ 20 V ±25V, -10V 1680 pF @ 800 V Standard 272W (Tc) -55°C ~ 175°C Through Hole
IXFN132N50P3

IXFN132N50P3

MOSFET N-CH 500V 112A SOT227B

IXYS

262 38.29
- +

RFQ

IXFN132N50P3

Datasheet

Tube HiPerFET™, Polar3™ Active N-Channel MOSFET (Metal Oxide) 500 V 112A (Tc) 10V 39mOhm @ 66A, 10V 5V @ 8mA 250 nC @ 10 V ±30V 18600 pF @ 25 V - 1500W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
C3M0015065K

C3M0015065K

SICFET N-CH 650V 120A TO247-4L

Wolfspeed, Inc.

1,036 45.82
- +

RFQ

C3M0015065K

Datasheet

Tube C3M™ Active N-Channel SiCFET (Silicon Carbide) 650 V 120A (Tc) 15V 21mOhm @ 55.8A, 15V 3.6V @ 15.5mA 188 nC @ 15 V +15V, -4V 5011 pF @ 400 V - 416W (Tc) -40°C ~ 175°C (TJ) Through Hole
SSM3K15ACT,L3F

SSM3K15ACT,L3F

MOSFET N-CH 30V 100MA CST3

Toshiba Semiconductor and Storage

10,779 0.36
- +

RFQ

SSM3K15ACT,L3F

Datasheet

Tape & Reel (TR),Cut Tape (CT) U-MOSIII Active N-Channel MOSFET (Metal Oxide) 30 V 100mA (Ta) 2.5V, 4V 3.6Ohm @ 10mA, 4V 1.5V @ 100µA - ±20V 13.5 pF @ 3 V - 100mW (Ta) 150°C (TJ) Surface Mount
BSS84KW-TP

BSS84KW-TP

MOSFET P-CH 50V 130MA SOT323

Micro Commercial Co

28,282 0.36
- +

RFQ

BSS84KW-TP

Datasheet

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 50 V 130mA (Tj) 5V, 10V 8Ohm @ 100mA, 10V 2V @ 250µA - ±20V 22 pF @ 5 V - 225mW -55°C ~ 150°C (TJ) Surface Mount
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