+86 13640908945+86 13640908945 sales@chipscomponents.comsales@chipscomponents.com

Welcome to Zhuoliou industry co.,ltd

Photo Mfr. Part # Availability Price Quantity Datasheet Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
UJ4C075023K3S

UJ4C075023K3S

750V/23MOHM, SIC, CASCODE, G4, T

UnitedSiC

442 15.55
- +

RFQ

UJ4C075023K3S

Datasheet

Tube - Active N-Channel SiCFET (Silicon Carbide) 750 V 66A (Tc) 12V 29mOhm @ 40A, 12V 6V @ 10mA 37.8 nC @ 15 V ±20V 1400 pF @ 400 V - 306W (Tc) -55°C ~ 175°C Through Hole
UJ3C120070K3S

UJ3C120070K3S

SICFET N-CH 1200V 34.5A TO247-3

UnitedSiC

658 15.82
- +

RFQ

UJ3C120070K3S

Datasheet

Tube - Active N-Channel SiCFET (Cascode SiCJFET) 1200 V 34.5A (Tc) 12V 90mOhm @ 20A, 12V 6V @ 10mA 46 nC @ 15 V ±25V 1500 pF @ 100 V - 254.2W (Tc) -55°C ~ 175°C (TJ) Through Hole
C3M0065090J

C3M0065090J

SICFET N-CH 900V 35A D2PAK-7

Wolfspeed, Inc.

8,178 16.28
- +

RFQ

C3M0065090J

Datasheet

Tube C3M™ Active N-Channel SiCFET (Silicon Carbide) 900 V 35A (Tc) 15V 78mOhm @ 20A, 15V 2.1V @ 5mA 30 nC @ 15 V +19V, -8V 660 pF @ 600 V - 113W (Tc) -55°C ~ 150°C (TJ) Surface Mount
NTH4L045N065SC1

NTH4L045N065SC1

SILICON CARBIDE MOSFET, NCHANNEL

onsemi

192 16.52
- +

RFQ

NTH4L045N065SC1

Datasheet

Tube - Active N-Channel SiCFET (Silicon Carbide) 650 V 55A (Tc) 15V, 18V 50mOhm @ 25A, 18V 4.3V @ 8mA 105 nC @ 18 V +22V, -8V 1870 pF @ 325 V - 187W (Tc) -55°C ~ 175°C (TJ) Through Hole
MSC035SMA070B4

MSC035SMA070B4

TRANS SJT N-CH 700V 77A TO247-4

Microchip Technology

116 16.57
- +

RFQ

MSC035SMA070B4

Datasheet

Tube - Active N-Channel SiCFET (Silicon Carbide) 700 V 77A (Tc) 20V 44mOhm @ 30A, 20V 2.7V @ 2mA (Typ) 99 nC @ 20 V +23V, -10V 2010 pF @ 700 V - 283W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTA60N20X4

IXTA60N20X4

MOSFET ULTRA X4 200V 60A TO-263

IXYS

343 11.29
- +

RFQ

IXTA60N20X4

Datasheet

Tube - Active N-Channel MOSFET (Metal Oxide) 200 V 60A (Tc) 10V 21mOhm @ 30A, 10V 4.5V @ 250µA 33 nC @ 10 V ±20V 2450 pF @ 25 V - 250W (Tc) -55°C ~ 175°C (TJ) Surface Mount
C3M0075120J

C3M0075120J

SICFET N-CH 1200V 30A D2PAK-7

Wolfspeed, Inc.

3,648 17.72
- +

RFQ

C3M0075120J

Datasheet

Tube C3M™ Active N-Channel SiCFET (Silicon Carbide) 1200 V 30A (Tc) 15V 90mOhm @ 20A, 15V 4V @ 5mA 51 nC @ 15 V +19V, -8V 1350 pF @ 1000 V - 113.6W (Tc) -55°C ~ 150°C (TJ) Surface Mount
C3M0075120D

C3M0075120D

SICFET N-CH 1200V 30A TO247-3

Wolfspeed, Inc.

274 17.72
- +

RFQ

C3M0075120D

Datasheet

Tube C3M™ Active N-Channel SiCFET (Silicon Carbide) 1200 V 30A (Tc) 15V 90mOhm @ 20A, 15V 4V @ 5mA 54 nC @ 15 V +19V, -8V 1350 pF @ 1000 V - 113.6W (Tc) -55°C ~ 150°C (TJ) Through Hole
SCT20N120

SCT20N120

SICFET N-CH 1200V 20A HIP247

STMicroelectronics

151 17.89
- +

RFQ

SCT20N120

Datasheet

Tube - Active N-Channel SiCFET (Silicon Carbide) 1200 V 20A (Tc) 20V 290mOhm @ 10A, 20V 3.5V @ 1mA 45 nC @ 20 V +25V, -10V 650 pF @ 400 V - 175W (Tc) -55°C ~ 200°C (TJ) Through Hole
SCT3080KRC14

SCT3080KRC14

SICFET N-CH 1200V 31A TO247-4L

Rohm Semiconductor

563 17.95
- +

RFQ

SCT3080KRC14

Datasheet

Tube - Active N-Channel SiCFET (Silicon Carbide) 1200 V 31A (Tc) 18V 104mOhm @ 10A, 18V 5.6V @ 5mA 60 nC @ 18 V +22V, -4V 785 pF @ 800 V - 165W 175°C (TJ) Through Hole
SIHG018N60E-GE3

SIHG018N60E-GE3

MOSFET N-CH 600V 99A TO247AC

Vishay Siliconix

918 18.03
- +

RFQ

SIHG018N60E-GE3

Datasheet

Tube E Active N-Channel MOSFET (Metal Oxide) 600 V 99A (Tc) 10V 23mOhm @ 25A, 10V 5V @ 250µA 228 nC @ 10 V ±30V 7612 pF @ 100 V - 524W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTT11P50

IXTT11P50

MOSFET P-CH 500V 11A TO268

IXYS

2,716 12.12
- +

RFQ

IXTT11P50

Datasheet

Tube - Active P-Channel MOSFET (Metal Oxide) 500 V 11A (Tc) 10V 750mOhm @ 5.5A, 10V 5V @ 250µA 130 nC @ 10 V ±20V 4700 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTT16N50D2

IXTT16N50D2

MOSFET N-CH 500V 16A TO268

IXYS

101 18.37
- +

RFQ

IXTT16N50D2

Datasheet

Tube Depletion Active N-Channel MOSFET (Metal Oxide) 500 V 16A (Tc) 0V 240mOhm @ 8A, 0V - 199 nC @ 5 V ±20V 5250 pF @ 25 V Depletion Mode 695W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFT50N85XHV

IXFT50N85XHV

MOSFET N-CH 850V 50A TO268

IXYS

979 19.06
- +

RFQ

IXFT50N85XHV

Datasheet

Tube HiPerFET™, Ultra X Active N-Channel MOSFET (Metal Oxide) 850 V 50A (Tc) 10V 105mOhm @ 500mA, 10V 5.5V @ 4mA 152 nC @ 10 V ±30V 4480 pF @ 25 V - 890W (Tc) -55°C ~ 150°C (TJ) Surface Mount
C3M0065100J

C3M0065100J

SICFET N-CH 1000V 35A D2PAK-7

Wolfspeed, Inc.

4,452 19.15
- +

RFQ

C3M0065100J

Datasheet

Tube C3M™ Active N-Channel SiCFET (Silicon Carbide) 1000 V 35A (Tc) 15V 78mOhm @ 20A, 15V 3.5V @ 5mA 35 nC @ 15 V +15V, -4V 660 pF @ 600 V - 113.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
C3M0065100K

C3M0065100K

SICFET N-CH 1000V 35A TO247-4L

Wolfspeed, Inc.

2,020 19.15
- +

RFQ

C3M0065100K

Datasheet

Tube C3M™ Active N-Channel SiCFET (Silicon Carbide) 1000 V 35A (Tc) 15V 78mOhm @ 20A, 15V 3.5V @ 5mA 35 nC @ 15 V +19V, -8V 660 pF @ 600 V - 113.5W (Tc) -55°C ~ 150°C (TJ) Through Hole
UF3SC120040B7S

UF3SC120040B7S

1200V/40MOHM, SIC, STACKED FAST

UnitedSiC

2,773 26.83
- +

RFQ

UF3SC120040B7S

Datasheet

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel SiCFET (Cascode SiCJFET) 1200 V 47A (Tc) 12V 45mOhm @ 35A, 12V 6V @ 10mA 43 nC @ 12 V ±25V 1500 pF @ 100 V - 214W (Tc) -55°C ~ 175°C (TJ) Surface Mount
TP65H050WS

TP65H050WS

GANFET N-CH 650V 34A TO247-3

Transphorm

236 19.24
- +

RFQ

TP65H050WS

Datasheet

Tube - Active N-Channel GaNFET (Cascode Gallium Nitride FET) 650 V 34A (Tc) 12V 60mOhm @ 22A, 10V 4.8V @ 700µA 24 nC @ 10 V ±20V 1000 pF @ 400 V - 119W (Tc) -55°C ~ 150°C (TJ) Through Hole
TP65H035G4WS

TP65H035G4WS

GANFET N-CH 650V 46.5A TO247-3

Transphorm

716 19.54
- +

RFQ

TP65H035G4WS

Datasheet

Tube - Active N-Channel GaNFET (Cascode Gallium Nitride FET) 650 V 46.5A (Tc) 10V 41mOhm @ 30A, 10V 4.8V @ 1mA 22 nC @ 0 V ±20V 1500 pF @ 400 V - 156W (Tc) -55°C ~ 150°C Through Hole
IXFX160N30T

IXFX160N30T

MOSFET N-CH 300V 160A PLUS247-3

IXYS

930 19.54
- +

RFQ

IXFX160N30T

Datasheet

Tube HiPerFET™, Trench Active N-Channel MOSFET (Metal Oxide) 300 V 160A (Tc) 10V 19mOhm @ 60A, 10V 5V @ 8mA 335 nC @ 10 V ±20V 28000 pF @ 25 V - 1390W (Tc) -55°C ~ 150°C (TJ) Through Hole
Total 42446 Records«Prev1... 8081828384858687...2123Next»
Request a Quote
Part Number
Quantity
Contact
Email
Company
Comments
  • Help you to save your cost and time.
    Help you to save your cost and time.
    Reliable package for your goods.
    Reliable package for your goods.
    Fast Reliable Delivery to save time.
    Fast Reliable Delivery to save time.
    Quality premium after-sale service.
    Quality premium after-sale service.
    Copyright © 2023 Zhuoliou industry co.,ltd
    HOME

    HOME

    PRODUCT

    PRODUCT

    PHONE

    PHONE

    USER

    USER