+86 13640908945+86 13640908945 sales@chipscomponents.comsales@chipscomponents.com

Welcome to Zhuoliou industry co.,ltd

Photo Mfr. Part # Availability Price Quantity Datasheet Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IXFH340N075T2

IXFH340N075T2

MOSFET N-CH 75V 340A TO247AD

IXYS

306 12.31
- +

RFQ

IXFH340N075T2

Datasheet

Tube HiPerFET™, TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 75 V 340A (Tc) 10V 3.2mOhm @ 100A, 10V 4V @ 3mA 300 nC @ 10 V ±20V 19000 pF @ 25 V - 935W (Tc) -55°C ~ 175°C (TJ) Through Hole
G3R160MT17D

G3R160MT17D

SIC MOSFET N-CH 21A TO247-3

GeneSiC Semiconductor

539 12.97
- +

RFQ

G3R160MT17D

Datasheet

Tube G3R™ Active N-Channel SiCFET (Silicon Carbide) 1700 V 21A (Tc) 15V 208mOhm @ 12A, 15V 2.7V @ 5mA 51 nC @ 15 V ±15V 1272 pF @ 1000 V - 175W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFH50N30Q3

IXFH50N30Q3

MOSFET N-CH 300V 50A TO247AD

IXYS

2,992 13.29
- +

RFQ

IXFH50N30Q3

Datasheet

Tube HiPerFET™, Q3 Class Active N-Channel MOSFET (Metal Oxide) 300 V 50A (Tc) 10V 80mOhm @ 25A, 10V 6.5V @ 4mA 65 nC @ 10 V ±20V 3160 pF @ 25 V - 690W (Tc) -55°C ~ 150°C (TJ) Through Hole
UF3C065030B3

UF3C065030B3

MOSFET N-CH 650V 65A TO263

UnitedSiC

3,676 19.39
- +

RFQ

UF3C065030B3

Datasheet

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel - 650 V 65A (Tc) 12V 35mOhm @ 40A, 12V 6V @ 10mA 51 nC @ 15 V ±25V 1500 pF @ 100 V - 242W (Tc) -55°C ~ 175°C (TJ) Surface Mount
G3R160MT17J

G3R160MT17J

SIC MOSFET N-CH 22A TO263-7

GeneSiC Semiconductor

1,690 13.75
- +

RFQ

G3R160MT17J

Datasheet

Tube G3R™ Active N-Channel SiCFET (Silicon Carbide) 1700 V 22A (Tc) 15V 208mOhm @ 12A, 15V 2.7V @ 5mA 51 nC @ 15 V ±15V 1272 pF @ 1000 V - 187W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPW60R037P7XKSA1

IPW60R037P7XKSA1

MOSFET N-CH 650V 76A TO247-3

Infineon Technologies

4,135 13.92
- +

RFQ

IPW60R037P7XKSA1

Datasheet

Tube CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 650 V 76A (Tc) 10V 37mOhm @ 29.5A, 10V 4V @ 1.48mA 121 nC @ 10 V ±20V 5243 pF @ 400 V - 255W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDL100N50F

FDL100N50F

MOSFET N-CH 500V 100A TO264-3

onsemi

5,143 14.08
- +

RFQ

FDL100N50F

Datasheet

Tube UniFET™ Active N-Channel MOSFET (Metal Oxide) 500 V 100A (Tc) 10V 55mOhm @ 50A, 10V 5V @ 250µA 238 nC @ 10 V ±30V 12000 pF @ 25 V - 2500W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFT120N25X3HV

IXFT120N25X3HV

MOSFET N-CH 250V 120A TO268HV

IXYS

1,057 14.46
- +

RFQ

IXFT120N25X3HV

Datasheet

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 250 V 120A (Tc) 10V 12mOhm @ 60A, 10V 4.5V @ 4mA 122 nC @ 10 V ±20V 7870 pF @ 25 V - 520W (Tc) -55°C ~ 150°C (TJ) Surface Mount
UF3C120080K3S

UF3C120080K3S

SICFET N-CH 1200V 33A TO247-3

UnitedSiC

19,055 15.92
- +

RFQ

UF3C120080K3S

Datasheet

Tube - Active N-Channel SiCFET (Cascode SiCJFET) 1200 V 33A (Tc) 12V 100mOhm @ 20A, 12V 6V @ 10mA 51 nC @ 15 V ±25V 1500 pF @ 100 V - 254.2W (Tc) -55°C ~ 175°C (TJ) Through Hole
UJ3C120080K3S

UJ3C120080K3S

SICFET N-CH 1200V 33A TO247-3

UnitedSiC

9,065 15.94
- +

RFQ

UJ3C120080K3S

Datasheet

Tube - Not For New Designs N-Channel SiCFET (Cascode SiCJFET) 1200 V 33A (Tc) 12V 100mOhm @ 20A, 12V 6V @ 10mA 51 nC @ 15 V ±25V 1500 pF @ 100 V - 254.2W (Tc) -55°C ~ 175°C (TJ) Through Hole
UF3C120080K4S

UF3C120080K4S

SICFET N-CH 1200V 33A TO247-4

UnitedSiC

2,852 15.94
- +

RFQ

UF3C120080K4S

Datasheet

Tube - Active N-Channel SiCFET (Cascode SiCJFET) 1200 V 33A (Tc) 12V 100mOhm @ 20A, 12V 6V @ 10mA 43 nC @ 12 V ±25V 1500 pF @ 100 V - 254.2W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPW65R045C7FKSA1

IPW65R045C7FKSA1

MOSFET N-CH 650V 46A TO247-3

Infineon Technologies

155 16.22
- +

RFQ

IPW65R045C7FKSA1

Datasheet

Tube CoolMOS™ C7 Active N-Channel MOSFET (Metal Oxide) 650 V 46A (Tc) 10V 45mOhm @ 24.9A, 10V 4V @ 1.25mA 93 nC @ 10 V ±20V 4340 pF @ 400 V - 227W (Tc) -55°C ~ 150°C (TJ) Through Hole
IMW65R048M1HXKSA1

IMW65R048M1HXKSA1

MOSFET 650V NCH SIC TRENCH

Infineon Technologies

1,413 18.45
- +

RFQ

Tube - Active - - - 39A (Tc) - - - - - - - - - -
G3R40MT12D

G3R40MT12D

SIC MOSFET N-CH 71A TO247-3

GeneSiC Semiconductor

248 18.46
- +

RFQ

G3R40MT12D

Datasheet

Tube G3R™ Active N-Channel SiCFET (Silicon Carbide) 1200 V 71A (Tc) 15V 48mOhm @ 35A, 15V 2.69V @ 10mA 106 nC @ 15 V ±15V 2929 pF @ 800 V - 333W (Tc) -55°C ~ 175°C (TJ) Through Hole
G3R40MT12K

G3R40MT12K

SIC MOSFET N-CH 71A TO247-4

GeneSiC Semiconductor

611 18.73
- +

RFQ

G3R40MT12K

Datasheet

Tube G3R™ Active N-Channel SiCFET (Silicon Carbide) 1200 V 71A (Tc) 15V 48mOhm @ 35A, 15V 2.69V @ 10mA 106 nC @ 15 V ±15V 2929 pF @ 800 V - 333W (Tc) -55°C ~ 175°C (TJ) Through Hole
G3R40MT12J

G3R40MT12J

SIC MOSFET N-CH 75A TO263-7

GeneSiC Semiconductor

680 19.05
- +

RFQ

G3R40MT12J

Datasheet

Tube G3R™ Active N-Channel SiCFET (Silicon Carbide) 1200 V 75A (Tc) 15V 48mOhm @ 35A, 15V 2.69V @ 10mA 106 nC @ 15 V ±15V 2929 pF @ 800 V - 374W (Tc) -55°C ~ 175°C (TJ) Surface Mount
UJ4C075018K3S

UJ4C075018K3S

SICFET N-CH 750V 81A TO247-3

UnitedSiC

7,535 19.12
- +

RFQ

UJ4C075018K3S

Datasheet

Tube - Active N-Channel SiCFET (Cascode SiCJFET) 750 V 81A (Tc) - 23mOhm @ 20A, 12V 6V @ 10mA 37.8 nC @ 15 V ±20V 1422 pF @ 100 V - 385W (Tc) -55°C ~ 175°C (TJ) Through Hole
UF3C065030T3S

UF3C065030T3S

MOSFET N-CH 650V 85A TO220-3

UnitedSiC

5,201 19.39
- +

RFQ

UF3C065030T3S

Datasheet

Tube - Active N-Channel - 650 V 85A (Tc) 12V 35mOhm @ 50A, 12V 6V @ 10mA 51 nC @ 15 V ±25V 1500 pF @ 100 V - 441W (Tc) -55°C ~ 175°C (TJ) Through Hole
UJ3C065030T3S

UJ3C065030T3S

MOSFET N-CH 650V 85A TO220-3

UnitedSiC

1,831 19.39
- +

RFQ

UJ3C065030T3S

Datasheet

Tube - Active N-Channel - 650 V 85A (Tc) 12V 35mOhm @ 50A, 12V 6V @ 10mA 51 nC @ 15 V ±25V 1500 pF @ 100 V - 441W (Tc) -55°C ~ 175°C (TJ) Through Hole
UJ4C075018K4S

UJ4C075018K4S

SICFET N-CH 750V 81A TO247-4

UnitedSiC

1,756 19.59
- +

RFQ

UJ4C075018K4S

Datasheet

Tube - Active N-Channel SiCFET (Cascode SiCJFET) 750 V 81A (Tc) - 23mOhm @ 20A, 12V 6V @ 10mA 37.8 nC @ 15 V ±20V 1422 pF @ 100 V - 385W (Tc) -55°C ~ 175°C (TJ) Through Hole
Total 42446 Records«Prev1... 3334353637383940...2123Next»
Request a Quote
Part Number
Quantity
Contact
Email
Company
Comments
  • Help you to save your cost and time.
    Help you to save your cost and time.
    Reliable package for your goods.
    Reliable package for your goods.
    Fast Reliable Delivery to save time.
    Fast Reliable Delivery to save time.
    Quality premium after-sale service.
    Quality premium after-sale service.
    Copyright © 2023 Zhuoliou industry co.,ltd
    HOME

    HOME

    PRODUCT

    PRODUCT

    PHONE

    PHONE

    USER

    USER