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Photo Mfr. Part # Availability Price Quantity Datasheet Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRFB3077PBF

IRFB3077PBF

MOSFET N-CH 75V 120A TO220AB

Infineon Technologies

4,916 5.43
- +

RFQ

IRFB3077PBF

Datasheet

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 75 V 120A (Tc) 10V 3.3mOhm @ 75A, 10V 4V @ 250µA 220 nC @ 10 V ±20V 9400 pF @ 50 V - 370W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFP22N50APBF

IRFP22N50APBF

MOSFET N-CH 500V 22A TO247-3

Vishay Siliconix

4,196 5.73
- +

RFQ

IRFP22N50APBF

Datasheet

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 22A (Tc) 10V 230mOhm @ 13A, 10V 4V @ 250µA 120 nC @ 10 V ±30V 3450 pF @ 25 V - 277W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFP4227PBF

IRFP4227PBF

MOSFET N-CH 200V 65A TO247AC

Infineon Technologies

3,825 5.25
- +

RFQ

IRFP4227PBF

Datasheet

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 200 V 65A (Tc) 10V 25mOhm @ 46A, 10V 5V @ 250µA 98 nC @ 10 V ±30V 4600 pF @ 25 V - 330W (Tc) -40°C ~ 175°C (TJ) Through Hole
G2R1000MT17D

G2R1000MT17D

SIC MOSFET N-CH 4A TO247-3

GeneSiC Semiconductor

9,514 5.77
- +

RFQ

G2R1000MT17D

Datasheet

Tube G2R™ Active N-Channel SiCFET (Silicon Carbide) 1700 V 4A (Tc) 20V 1.2Ohm @ 2A, 20V 4V @ 2mA - +20V, -5V 139 pF @ 1000 V - 53W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTA3N100D2

IXTA3N100D2

MOSFET N-CH 1000V 3A TO263

IXYS

3,138 5.80
- +

RFQ

IXTA3N100D2

Datasheet

Tube Depletion Active N-Channel MOSFET (Metal Oxide) 1000 V 3A (Tc) - 5.5Ohm @ 1.5A, 0V - 37.5 nC @ 5 V ±20V 1020 pF @ 25 V Depletion Mode 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPB017N10N5ATMA1

IPB017N10N5ATMA1

MOSFET N-CH 100V 180A TO263-7

Infineon Technologies

3,217 8.65
- +

RFQ

IPB017N10N5ATMA1

Datasheet

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 180A (Tc) 6V, 10V 1.7mOhm @ 100A, 10V 3.8V @ 279µA 210 nC @ 10 V ±20V 15600 pF @ 50 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
G3R350MT12J

G3R350MT12J

SIC MOSFET N-CH 11A TO263-7

GeneSiC Semiconductor

6,800 5.84
- +

RFQ

G3R350MT12J

Datasheet

Tube G3R™ Active N-Channel SiCFET (Silicon Carbide) 1200 V 11A (Tc) 15V 420mOhm @ 4A, 15V 2.69V @ 2mA 12 nC @ 15 V ±15V 334 pF @ 800 V - 75W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FCPF220N80

FCPF220N80

MOSFET N-CH 800V 23A TO220F

onsemi

490 6.58
- +

RFQ

FCPF220N80

Datasheet

Tube SuperFET® II Active N-Channel MOSFET (Metal Oxide) 800 V 23A (Tc) 10V 220mOhm @ 11.5A, 10V 4.5V @ 2.3mA 105 nC @ 10 V ±20V 4560 pF @ 100 V - 44W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPB60R099CPATMA1

IPB60R099CPATMA1

MOSFET N-CH 600V 31A TO263-3

Infineon Technologies

5,962 10.75
- +

RFQ

IPB60R099CPATMA1

Datasheet

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 31A (Tc) 10V 99mOhm @ 18A, 10V 3.5V @ 1.2mA 80 nC @ 10 V ±20V 2800 pF @ 100 V - 255W (Tc) -55°C ~ 150°C (TJ) Surface Mount
AUIRF4905

AUIRF4905

MOSFET P-CH 55V 74A TO220AB

Infineon Technologies

4,167 6.66
- +

RFQ

AUIRF4905

Datasheet

Tube HEXFET® Active P-Channel MOSFET (Metal Oxide) 55 V 74A (Tc) 10V 20mOhm @ 38A, 10V 4V @ 250µA 180 nC @ 10 V ±20V 3400 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTA26P20P

IXTA26P20P

MOSFET P-CH 200V 26A TO263

IXYS

1,540 6.74
- +

RFQ

IXTA26P20P

Datasheet

Tube Polar Active P-Channel MOSFET (Metal Oxide) 200 V 26A (Tc) 10V 170mOhm @ 13A, 10V 4V @ 250µA 56 nC @ 10 V ±20V 2740 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFP2907PBF

IRFP2907PBF

MOSFET N-CH 75V 209A TO247AC

Infineon Technologies

9,506 6.79
- +

RFQ

IRFP2907PBF

Datasheet

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 75 V 209A (Tc) 10V 4.5mOhm @ 125A, 10V 4V @ 250µA 620 nC @ 10 V ±20V 13000 pF @ 25 V - 470W (Tc) -55°C ~ 175°C (TJ) Through Hole
G2R1000MT17J

G2R1000MT17J

SIC MOSFET N-CH 3A TO263-7

GeneSiC Semiconductor

17,210 6.82
- +

RFQ

G2R1000MT17J

Datasheet

Tube G2R™ Active N-Channel SiCFET (Silicon Carbide) 1700 V 3A (Tc) 20V 1.2Ohm @ 2A, 20V 4V @ 2mA - +20V, -10V 139 pF @ 1000 V - 54W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPP120N08S403AKSA1

IPP120N08S403AKSA1

MOSFET N-CH 80V 120A TO220-3

Infineon Technologies

177 6.85
- +

RFQ

IPP120N08S403AKSA1

Datasheet

Tube Automotive, AEC-Q101, OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 80 V 120A (Tc) 10V 2.8mOhm @ 100A, 10V 4V @ 223µA 167 nC @ 10 V ±20V 11550 pF @ 25 V - 278W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDP075N15A-F102

FDP075N15A-F102

MOSFET N-CH 150V 130A TO220-3

onsemi

400 6.86
- +

RFQ

FDP075N15A-F102

Datasheet

Tube PowerTrench® Active N-Channel MOSFET (Metal Oxide) 150 V 130A (Tc) 10V 7.5mOhm @ 100A, 10V 4V @ 250µA 100 nC @ 10 V ±20V 7350 pF @ 75 V - 333W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTP76P10T

IXTP76P10T

MOSFET P-CH 100V 76A TO220AB

IXYS

9,338 6.90
- +

RFQ

IXTP76P10T

Datasheet

Tube TrenchP™ Active P-Channel MOSFET (Metal Oxide) 100 V 76A (Tc) 10V 25mOhm @ 38A, 10V 4V @ 250µA 197 nC @ 10 V ±15V 13700 pF @ 25 V - 298W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTA44P15T

IXTA44P15T

MOSFET P-CH 150V 44A TO263

IXYS

1,050 7.10
- +

RFQ

IXTA44P15T

Datasheet

Tube TrenchP™ Active P-Channel MOSFET (Metal Oxide) 150 V 44A (Tc) 10V 65mOhm @ 22A, 10V 4V @ 250µA 175 nC @ 10 V ±15V 13400 pF @ 25 V - 298W (Tc) -55°C ~ 150°C (TJ) Surface Mount
STP20NK50Z

STP20NK50Z

MOSFET N-CH 500V 17A TO220AB

STMicroelectronics

2,609 6.52
- +

RFQ

STP20NK50Z

Datasheet

Tube SuperMESH™ Active N-Channel MOSFET (Metal Oxide) 500 V 17A (Tc) 10V 270mOhm @ 8.5A, 10V 4.5V @ 100µA 119 nC @ 10 V ±30V 2600 pF @ 25 V - 190W (Tc) -50°C ~ 150°C (TJ) Through Hole
IXTP180N10T

IXTP180N10T

MOSFET N-CH 100V 180A TO220AB

IXYS

780 7.22
- +

RFQ

IXTP180N10T

Datasheet

Tube Trench Active N-Channel MOSFET (Metal Oxide) 100 V 180A (Tc) 10V 6.4mOhm @ 25A, 10V 4.5V @ 250µA 151 nC @ 10 V ±30V 6900 pF @ 25 V - 480W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP051N15N5AKSA1

IPP051N15N5AKSA1

MOSFET N-CH 150V 120A TO220-3

Infineon Technologies

975 7.46
- +

RFQ

IPP051N15N5AKSA1

Datasheet

Tube OptiMOS™ 5 Active N-Channel MOSFET (Metal Oxide) 150 V 120A (Tc) 8V, 10V 5.1mOhm @ 60A, 10V 4.6V @ 264µA 100 nC @ 10 V ±20V 7800 pF @ 75 V - 500mW (Tc) -55°C ~ 175°C (TJ) Through Hole
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