+86 13640908945+86 13640908945 sales@chipscomponents.comsales@chipscomponents.com

Welcome to Zhuoliou industry co.,ltd

Photo Mfr. Part # Availability Price Quantity Datasheet Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
T2N7002AK,LM

T2N7002AK,LM

MOSFET N-CH 60V 200MA SOT23

Toshiba Semiconductor and Storage

224,832 0.16
- +

FFQ

T2N7002AK,LM

Datasheet

Tape & Reel (TR),Cut Tape (CT) U-MOSVII-H Active N-Channel MOSFET (Metal Oxide) 60 V 200mA (Ta) 4.5V, 10V 3.9Ohm @ 100mA, 10V 2.1V @ 250µA 0.35 nC @ 4.5 V ±20V 17 pF @ 10 V - 320mW (Ta) 150°C (TJ) Surface Mount
T2N7002BK,LM

T2N7002BK,LM

MOSFET N-CH 60V 400MA SOT23-3

Toshiba Semiconductor and Storage

191,175 0.17
- +

FFQ

T2N7002BK,LM

Datasheet

Tape & Reel (TR),Cut Tape (CT) U-MOSVII-H Active N-Channel MOSFET (Metal Oxide) 60 V 400mA (Ta) 4.5V, 10V 1.5Ohm @ 100mA, 10V 2.1V @ 250µA 0.6 nC @ 4.5 V ±20V 40 pF @ 10 V - 320mW (Ta) 150°C (TJ) Surface Mount
SSM3K35CTC,L3F

SSM3K35CTC,L3F

MOSFET N-CH 20V 250MA CST3C

Toshiba Semiconductor and Storage

331,418 0.34
- +

FFQ

SSM3K35CTC,L3F

Datasheet

Tape & Reel (TR),Cut Tape (CT) U-MOSIII Active N-Channel MOSFET (Metal Oxide) 20 V 250mA (Ta) 1.2V, 4.5V 1.1Ohm @ 150mA, 4.5V 1V @ 100µA 0.34 nC @ 4.5 V ±10V 36 pF @ 10 V - 500mW (Ta) 150°C (TJ) Surface Mount
SSM3K15AMFV,L3F

SSM3K15AMFV,L3F

MOSFET N-CH 30V 100MA VESM

Toshiba Semiconductor and Storage

2,533 0.30
- +

FFQ

SSM3K15AMFV,L3F

Datasheet

Tape & Reel (TR),Cut Tape (CT) U-MOSIII Active N-Channel MOSFET (Metal Oxide) 30 V 100mA (Ta) 2.5V, 4V 3.6Ohm @ 10mA, 4V 1.5V @ 100µA - ±20V 13.5 pF @ 3 V - 150mW (Ta) 150°C (TJ) Surface Mount
SSM3K36MFV,L3F

SSM3K36MFV,L3F

MOSFET N-CH 20V 500MA VESM

Toshiba Semiconductor and Storage

100,536 0.41
- +

FFQ

SSM3K36MFV,L3F

Datasheet

Tape & Reel (TR),Cut Tape (CT) U-MOSIII Active N-Channel MOSFET (Metal Oxide) 20 V 500mA (Ta) 1.5V, 5V 630mOhm @ 200mA, 5V 1V @ 1mA 1.23 nC @ 4 V ±10V 46 pF @ 10 V - 150mW (Ta) 150°C (TJ) Surface Mount
SSM3J56MFV,L3F

SSM3J56MFV,L3F

MOSFET P-CH 20V 800MA VESM

Toshiba Semiconductor and Storage

97,121 0.47
- +

FFQ

SSM3J56MFV,L3F

Datasheet

Tape & Reel (TR),Cut Tape (CT) U-MOSVI Active P-Channel MOSFET (Metal Oxide) 20 V 800mA (Ta) 1.2V, 4.5V 390mOhm @ 800mA, 4.5V - - ±8V 100 pF @ 10 V - 150mW (Ta) 150°C (TJ) Surface Mount
SSM3J332R,LF

SSM3J332R,LF

MOSFET P-CH 30V 6A SOT23F

Toshiba Semiconductor and Storage

100,039 0.47
- +

FFQ

SSM3J332R,LF

Datasheet

Tape & Reel (TR),Cut Tape (CT) U-MOSVI Active P-Channel MOSFET (Metal Oxide) 30 V 6A (Ta) 1.8V, 10V 42mOhm @ 5A, 10V 1.2V @ 1mA 8.2 nC @ 4.5 V ±12V 560 pF @ 15 V - 1W (Ta) 150°C (TJ) Surface Mount
SSM3J328R,LF

SSM3J328R,LF

MOSFET P-CH 20V 6A SOT23F

Toshiba Semiconductor and Storage

17,507 0.43
- +

FFQ

SSM3J328R,LF

Datasheet

Tape & Reel (TR),Cut Tape (CT) U-MOSVI Active P-Channel MOSFET (Metal Oxide) 20 V 6A (Ta) 1.5V, 4.5V 29.8mOhm @ 3A, 4.5V 1V @ 1mA 12.8 nC @ 4.5 V ±8V 840 pF @ 10 V - 1W (Ta) 150°C (TJ) Surface Mount
TPH11006NL,LQ

TPH11006NL,LQ

MOSFET N-CH 60V 17A 8SOP

Toshiba Semiconductor and Storage

17,945 0.76
- +

FFQ

TPH11006NL,LQ

Datasheet

Tape & Reel (TR),Cut Tape (CT) U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 60 V 17A (Tc) 4.5V, 10V 11.4mOhm @ 8.5A, 10V 2.5V @ 200µA 23 nC @ 10 V ±20V 2000 pF @ 30 V - 1.6W (Ta), 34W (Tc) 150°C (TJ) Surface Mount
SSM3K329R,LF

SSM3K329R,LF

MOSFET N CH 30V 3.5A 2-3Z1A

Toshiba Semiconductor and Storage

49,177 0.45
- +

FFQ

SSM3K329R,LF

Datasheet

Tape & Reel (TR),Cut Tape (CT) U-MOSIII Active N-Channel MOSFET (Metal Oxide) 30 V 3.5A (Ta) 1.8V, 4V 126mOhm @ 1A, 4V 1V @ 1mA 1.5 nC @ 4 V ±12V 123 pF @ 15 V - 1W (Ta) 150°C (TJ) Surface Mount
SSM3J338R,LF

SSM3J338R,LF

MOSFET P-CH 12V 6A SOT23F

Toshiba Semiconductor and Storage

105,779 0.38
- +

FFQ

SSM3J338R,LF

Datasheet

Tape & Reel (TR),Cut Tape (CT) U-MOSVII Active P-Channel MOSFET (Metal Oxide) 12 V 6A (Ta) 1.8V, 8V 17.6mOhm @ 6A, 8V 1V @ 1mA 19.5 nC @ 4.5 V ±10V 1400 pF @ 6 V - 1W (Ta) 150°C (TJ) Surface Mount
SSM3J133TU,LF

SSM3J133TU,LF

MOSFET P-CH 20V 5.5A UFM

Toshiba Semiconductor and Storage

129,982 0.48
- +

FFQ

SSM3J133TU,LF

Datasheet

Tape & Reel (TR),Cut Tape (CT) U-MOSVI Active P-Channel MOSFET (Metal Oxide) 20 V 5.5A (Ta) 1.5V, 4.5V 29.8mOhm @ 3A, 4.5V 1V @ 1mA 12.8 nC @ 4.5 V ±8V 840 pF @ 10 V - 500mW (Ta) 150°C (TJ) Surface Mount
SSM6J501NU,LF

SSM6J501NU,LF

MOSFET P-CH 20V 10A 6UDFNB

Toshiba Semiconductor and Storage

2,272 0.52
- +

FFQ

SSM6J501NU,LF

Datasheet

Tape & Reel (TR),Cut Tape (CT) U-MOSVI Active P-Channel MOSFET (Metal Oxide) 20 V 10A (Ta) 1.5V, 4.5V 15.3mOhm @ 4A, 4.5V 1V @ 1mA 29.9 nC @ 4.5 V ±8V 2600 pF @ 10 V - 1W (Ta) 150°C (TJ) Surface Mount
SSM3J130TU,LF

SSM3J130TU,LF

MOSFET P-CH 20V 4.4A UFM

Toshiba Semiconductor and Storage

262,227 0.48
- +

FFQ

SSM3J130TU,LF

Datasheet

Tape & Reel (TR),Cut Tape (CT) U-MOSVI Active P-Channel MOSFET (Metal Oxide) 20 V 4.4A (Ta) 1.5V, 4.5V 25.8mOhm @ 4A, 4.5V 1V @ 1mA 24.8 nC @ 4.5 V ±8V 1800 pF @ 10 V - 500mW (Ta) 150°C (TJ) Surface Mount
SSM3K2615R,LF

SSM3K2615R,LF

MOSFET N-CH 60V 2A SOT23F

Toshiba Semiconductor and Storage

52,353 0.48
- +

FFQ

SSM3K2615R,LF

Datasheet

Tape & Reel (TR),Cut Tape (CT) π-MOSV Active N-Channel MOSFET (Metal Oxide) 60 V 2A (Ta) 3.3V, 10V 300mOhm @ 1A, 10V 2V @ 1mA - ±20V 150 pF @ 10 V - 1W (Ta) 150°C (TJ) Surface Mount
XK1R9F10QB,LXGQ

XK1R9F10QB,LXGQ

MOSFET N-CH 100V 160A TO220SM

Toshiba Semiconductor and Storage

4,952 4.08
- +

FFQ

XK1R9F10QB,LXGQ

Datasheet

Tape & Reel (TR),Cut Tape (CT) U-MOSX-H Active N-Channel MOSFET (Metal Oxide) 100 V 160A (Ta) 6V, 10V 1.92mOhm @ 80A, 10V 3.5V @ 1mA 184 nC @ 10 V ±20V 11500 pF @ 10 V - 375W (Tc) 175°C Surface Mount
SSM3K341R,LXHF

SSM3K341R,LXHF

AECQ MOSFET NCH 60V 6A SOT23F

Toshiba Semiconductor and Storage

3,790 0.63
- +

FFQ

SSM3K341R,LXHF

Datasheet

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 60 V 6A (Ta) 4V, 10V 36mOhm @ 5A, 10V 2.5V @ 100µA 9.3 nC @ 10 V ±20V 550 pF @ 10 V - 1.2W (Ta) 175°C Surface Mount
TK6R7P06PL,RQ

TK6R7P06PL,RQ

MOSFET N-CHANNEL 60V 46A DPAK

Toshiba Semiconductor and Storage

2,459 0.91
- +

FFQ

TK6R7P06PL,RQ

Datasheet

Tape & Reel (TR),Cut Tape (CT) U-MOSIX-H Active N-Channel MOSFET (Metal Oxide) 60 V 46A (Tc) 4.5V, 10V 6.7mOhm @ 23A, 10V 2.5V @ 300µA 26 nC @ 10 V ±20V 1990 pF @ 30 V - 66W (Tc) 175°C Surface Mount
TPCA8052-H(T2L1,VM

TPCA8052-H(T2L1,VM

MOSFET N-CH 40V 20A 8SOP

Toshiba Semiconductor and Storage

9,995 1.07
- +

FFQ

TPCA8052-H(T2L1,VM

Datasheet

Tape & Reel (TR),Cut Tape (CT) U-MOSVI-H Active N-Channel MOSFET (Metal Oxide) 40 V 20A (Ta) 4.5V, 10V 11.3mOhm @ 10A, 10V 2.3V @ 200µA 25 nC @ 10 V ±20V 2110 pF @ 10 V - 1.6W (Ta), 30W (Tc) 150°C Surface Mount
TK3R1P04PL,RQ

TK3R1P04PL,RQ

MOSFET N-CHANNEL 40V 58A DPAK

Toshiba Semiconductor and Storage

19,509 1.10
- +

FFQ

TK3R1P04PL,RQ

Datasheet

Tape & Reel (TR),Cut Tape (CT) U-MOSIX-H Active N-Channel MOSFET (Metal Oxide) 40 V 58A (Tc) 4.5V, 10V 3.1mOhm @ 29A, 10V 2.4V @ 500µA 60 nC @ 10 V ±20V 4670 pF @ 20 V - 87W (Tc) 175°C Surface Mount
Total 1042 Records«Prev1234...53Next»
Request a Quote
Part Number
Quantity
Contact
Email
Company
Comments
  • Help you to save your cost and time.
    Help you to save your cost and time.
    Reliable package for your goods.
    Reliable package for your goods.
    Fast Reliable Delivery to save time.
    Fast Reliable Delivery to save time.
    Quality premium after-sale service.
    Quality premium after-sale service.
    Copyright © 2023 Zhuoliou industry co.,ltd
    HOME

    HOME

    PRODUCT

    PRODUCT

    PHONE

    PHONE

    USER

    USER