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Photo Mfr. Part # Availability Price Quantity Datasheet Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
EPC2218

EPC2218

GANFET N-CH 100V DIE

EPC

62,985 4.75
- +

RFQ

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel GaNFET (Gallium Nitride) 100 V 60A (Ta) 5V 3.2mOhm @ 25A, 5V 2.5V @ 7mA 16.3 nC @ 5 V +6V, -4V 2703 pF @ 50 V - - -40°C ~ 150°C (TJ) Surface Mount
EPC2001C

EPC2001C

GANFET N-CH 100V 36A DIE OUTLINE

EPC

168,709 4.93
- +

RFQ

EPC2001C

Datasheet

Tape & Reel (TR),Cut Tape (CT) eGaN® Active N-Channel GaNFET (Gallium Nitride) 100 V 36A (Ta) 5V 7mOhm @ 25A, 5V 2.5V @ 5mA 9 nC @ 5 V +6V, -4V 900 pF @ 50 V - - -40°C ~ 150°C (TJ) Surface Mount
EPC2215

EPC2215

GAN TRANS 200V 8MOHM BUMPED DIE

EPC

33,623 6.44
- +

RFQ

EPC2215

Datasheet

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel GaNFET (Gallium Nitride) 200 V 32A (Ta) 5V 8mOhm @ 20A, 5V 2.5V @ 6mA 17.7 nC @ 5 V +6V, -4V 1790 pF @ 100 V - - -40°C ~ 150°C (TJ) Surface Mount
EPC2010C

EPC2010C

GANFET N-CH 200V 22A DIE OUTLINE

EPC

13,065 6.88
- +

RFQ

EPC2010C

Datasheet

Tape & Reel (TR),Cut Tape (CT) eGaN® Active N-Channel GaNFET (Gallium Nitride) 200 V 22A (Ta) 5V 25mOhm @ 12A, 5V 2.5V @ 3mA 5.3 nC @ 5 V +6V, -4V 540 pF @ 100 V - - -40°C ~ 150°C (TJ) Surface Mount
EPC2206

EPC2206

GANFET N-CH 80V 90A DIE

EPC

105,383 6.41
- +

RFQ

EPC2206

Datasheet

Tape & Reel (TR),Cut Tape (CT) eGaN® Active N-Channel GaNFET (Gallium Nitride) 80 V 90A (Ta) 5V 2.2mOhm @ 29A, 5V 2.5V @ 13mA 19 nC @ 5 V +6V, -4V 1940 pF @ 40 V - - -40°C ~ 150°C (TJ) Surface Mount
EPC2031

EPC2031

GANFET NCH 60V 31A DIE

EPC

17,540 6.60
- +

RFQ

EPC2031

Datasheet

Tape & Reel (TR),Cut Tape (CT) eGaN® Active N-Channel GaNFET (Gallium Nitride) 60 V 31A (Ta) - 2.6mOhm @ 30A, 5V 2.5V @ 15mA 17 nC @ 5 V - 1800 pF @ 300 V - - -40°C ~ 150°C (TJ) Surface Mount
EPC2029

EPC2029

GANFET N-CH 80V 48A DIE

EPC

28,994 6.70
- +

RFQ

EPC2029

Datasheet

Tape & Reel (TR),Cut Tape (CT) eGaN® Active N-Channel GaNFET (Gallium Nitride) 80 V 48A (Ta) 5V 3.2mOhm @ 30A, 5V 2.5V @ 12mA 13 nC @ 5 V +6V, -4V 1410 pF @ 40 V - - -40°C ~ 150°C (TJ) Surface Mount
EPC2021

EPC2021

GANFET N-CH 80V 90A DIE

EPC

11,586 7.91
- +

RFQ

EPC2021

Datasheet

Tape & Reel (TR),Cut Tape (CT) eGaN® Active N-Channel GaNFET (Gallium Nitride) 80 V 90A (Ta) 5V 2.5mOhm @ 29A, 5V 2.5V @ 14mA 15 nC @ 5 V +6V, -4V 1650 pF @ 40 V - - -40°C ~ 150°C (TJ) Surface Mount
EPC2032

EPC2032

GANFET N-CH 100V 48A DIE

EPC

19,635 7.17
- +

RFQ

EPC2032

Datasheet

Tape & Reel (TR),Cut Tape (CT) eGaN® Active N-Channel GaNFET (Gallium Nitride) 100 V 48A (Ta) 5V 4mOhm @ 30A, 5V 2.5V @ 11mA 15 nC @ 5 V +6V, -4V 1530 pF @ 50 V - - -40°C ~ 150°C (TJ) Surface Mount
EPC2022

EPC2022

GANFET N-CH 100V 90A DIE

EPC

8,873 8.46
- +

RFQ

EPC2022

Datasheet

Tape & Reel (TR),Cut Tape (CT) eGaN® Active N-Channel GaNFET (Gallium Nitride) 100 V 90A (Ta) 5V 3.2mOhm @ 25A, 5V 2.5V @ 12mA - +6V, -4V 1500 pF @ 50 V - - -40°C ~ 150°C (TJ) Surface Mount
EPC2024

EPC2024

GANFET NCH 40V 60A DIE

EPC

4,893 7.67
- +

RFQ

EPC2024

Datasheet

Tape & Reel (TR),Cut Tape (CT) eGaN® Active N-Channel GaNFET (Gallium Nitride) 40 V 90A (Ta) 5V 1.5mOhm @ 37A, 5V 2.5V @ 19mA - +6V, -4V 2100 pF @ 20 V - - -40°C ~ 150°C (TJ) Surface Mount
EPC2034C

EPC2034C

GANFET N-CH 200V 48A DIE

EPC

19,433 7.98
- +

RFQ

EPC2034C

Datasheet

Tape & Reel (TR),Cut Tape (CT) eGaN® Active N-Channel GaNFET (Gallium Nitride) 200 V 48A (Ta) 5V 8mOhm @ 20A, 5V 2.5V @ 7mA 11 nC @ 5 V +6V, -4V 1140 pF @ 100 V - - -40°C ~ 150°C (TJ) Surface Mount
SCT2750NYTB

SCT2750NYTB

SICFET N-CH 1700V 5.9A TO268

Rohm Semiconductor

1,352 7.32
- +

RFQ

SCT2750NYTB

Datasheet

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel SiCFET (Silicon Carbide) 1700 V 5.9A (Tc) 18V 975mOhm @ 1.7A, 18V 4V @ 630µA 17 nC @ 18 V +22V, -6V 275 pF @ 800 V - 57W (Tc) 175°C (TJ) Surface Mount
EPC2033

EPC2033

GANFET N-CH 150V 48A DIE

EPC

13,878 8.67
- +

RFQ

EPC2033

Datasheet

Tape & Reel (TR),Cut Tape (CT) eGaN® Active N-Channel GaNFET (Gallium Nitride) 150 V 48A (Ta) - 7mOhm @ 25A, 5V 2.5V @ 9mA 10 nC @ 5 V - 1140 pF @ 75 V - - - Surface Mount
SCT3080KLGC11

SCT3080KLGC11

SICFET N-CH 1200V 31A TO247N

Rohm Semiconductor

991 22.11
- +

RFQ

SCT3080KLGC11

Datasheet

Tube - Active N-Channel SiCFET (Silicon Carbide) 1200 V 31A (Tc) 18V 104mOhm @ 10A, 18V 5.6V @ 5mA 60 nC @ 18 V +22V, -4V 785 pF @ 800 V - 165W (Tc) 175°C (TJ) Through Hole
SCT3030ALGC11

SCT3030ALGC11

SICFET N-CH 650V 70A TO247N

Rohm Semiconductor

5,794 32.61
- +

RFQ

SCT3030ALGC11

Datasheet

Tube - Active N-Channel SiCFET (Silicon Carbide) 650 V 70A (Tc) 18V 39mOhm @ 27A, 18V 5.6V @ 13.3mA 104 nC @ 18 V +22V, -4V 1526 pF @ 500 V - 262W (Tc) 175°C (TJ) Through Hole
SCT3030ARC14

SCT3030ARC14

SICFET N-CH 650V 70A TO247-4L

Rohm Semiconductor

425 53.55
- +

RFQ

SCT3030ARC14

Datasheet

Tube - Active N-Channel SiCFET (Silicon Carbide) 650 V 70A (Tc) 18V 39mOhm @ 27A, 18V 5.6V @ 13.3mA 104 nC @ 18 V +22V, -4V 1526 pF @ 500 V - 262W 175°C (TJ) Through Hole
T2N7002AK,LM

T2N7002AK,LM

MOSFET N-CH 60V 200MA SOT23

Toshiba Semiconductor and Storage

224,832 0.16
- +

RFQ

T2N7002AK,LM

Datasheet

Tape & Reel (TR),Cut Tape (CT) U-MOSVII-H Active N-Channel MOSFET (Metal Oxide) 60 V 200mA (Ta) 4.5V, 10V 3.9Ohm @ 100mA, 10V 2.1V @ 250µA 0.35 nC @ 4.5 V ±20V 17 pF @ 10 V - 320mW (Ta) 150°C (TJ) Surface Mount
T2N7002BK,LM

T2N7002BK,LM

MOSFET N-CH 60V 400MA SOT23-3

Toshiba Semiconductor and Storage

191,175 0.17
- +

RFQ

T2N7002BK,LM

Datasheet

Tape & Reel (TR),Cut Tape (CT) U-MOSVII-H Active N-Channel MOSFET (Metal Oxide) 60 V 400mA (Ta) 4.5V, 10V 1.5Ohm @ 100mA, 10V 2.1V @ 250µA 0.6 nC @ 4.5 V ±20V 40 pF @ 10 V - 320mW (Ta) 150°C (TJ) Surface Mount
BVSS84LT1G

BVSS84LT1G

MOSFET P-CH 50V 130MA SOT23-3

onsemi

351,758 0.41
- +

RFQ

BVSS84LT1G

Datasheet

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 50 V 130mA (Ta) 5V 10Ohm @ 100mA, 5V 2V @ 250µA 2.2 nC @ 10 V ±20V 36 pF @ 5 V - 225mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
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