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Photo Mfr. Part # Availability Price Quantity Datasheet Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
S2M0080120D

S2M0080120D

MOSFET SILICON CARBIDE SIC 1200V

SMC Diode Solutions

3,350 15.48
- +

FFQ

Tube - Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 41A (Tc) 20V 100mOhm @ 20A, 20V 4V @ 10mA 54 nC @ 20 V +25V, -10V 1324 pF @ 1000 V - 231W (Tc) -55°C ~ 175°C (TJ) Through Hole
S2M0080120K

S2M0080120K

MOSFET SILICON CARBIDE SIC 1200V

SMC Diode Solutions

3,343 15.93
- +

FFQ

Tube - Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 41A (Tc) 20V 100mOhm @ 20A, 20V 4V @ 10mA 54 nC @ 20 V +25V, -10V 1324 pF @ 1000 V - 231W (Tc) -55°C ~ 175°C (TJ) Through Hole
S2M0025120D

S2M0025120D

MOSFET SILICON CARBIDE SIC 1200V

SMC Diode Solutions

3,143 46.13
- +

FFQ

Tube - Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 63A (Tj) 20V 34mOhm @ 50A, 20V 4V @ 15mA 130 nC @ 20 V +25V, -10V 4402 pF @ 1000 V - 446W (Tc) -55°C ~ 175°C (TJ) Through Hole
S2M0025120K

S2M0025120K

MOSFET SILICON CARBIDE SIC 1200V

SMC Diode Solutions

3,671 46.51
- +

FFQ

Tube - Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 63A (Tc) 20V 34mOhm @ 50A, 20V 4V @ 15mA 130 nC @ 20 V +25V, -10V 4402 pF @ 1000 V - 446W (Tc) -55°C ~ 175°C (TJ) Through Hole
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