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Photo Mfr. Part # Availability Price Quantity Datasheet Packaging Series ProductStatus CoreType Material Diameter InductanceFactor(Al) Tolerance Gap EffectivePermeability(µe) InitialPermeability(µi) CoreFactor(ΣI/A)mm-1 EffectiveLength(le)mm EffectiveArea(Ae)mm² MinimumCoreCrossSection(Amin)mm² EffectiveMagneticVolume(Ve)mm³ Finish Height Length
AB2.8X4.5DY

AB2.8X4.5DY

AMORPHOUS CORE - AMOBEAD

Toshiba Semiconductor and Storage

3,537 0.39
- +

FFQ

Bag AB Active Rod - - 0.157 (4.00mm) - - Ungapped - - - - - - - Coated 0.224 (5.70mm)
AB3X2X3DY

AB3X2X3DY

AMORPHOUS CORE - AMOBEAD

Toshiba Semiconductor and Storage

3,977 0.23
- +

FFQ

Bag AB Active Rod - - 0.157 (4.00mm) - - Ungapped - - - - - - - Coated 0.165 (4.20mm)
AB4X2X6W

AB4X2X6W

AMORPHOUS CORE - AMOBEAD

Toshiba Semiconductor and Storage

2,024 1.06
- +

FFQ

Bag AB Active Rod - - 0.157 (4.00mm) 12 µH - Ungapped - - - - - - - Coated 0.236 (6.00mm)
MS21X14X4.5W

MS21X14X4.5W

AMORPHOUS CORE - MAGAMP

Toshiba Semiconductor and Storage

3,401 2.67
- +

FFQ

Bag MS Active Toroid - - - - - Ungapped - - - - 11.8 - - Coated 0.260 (6.60mm)
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