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| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Package / Case | Capacitance @ Vr, F | Supplier Device Package | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature - Junction | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
LSIC2SD120E20CCSCHOTTKY DIODE SIC 1200V 20A |
118 | 12.87 |
FFQ |
Datasheet |
Tube | Gen2 | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 582pF @ 1V, 1MHz | 0 ns | 100 µA @ 1200 V | 1200 V | 28A (DC) | -55°C ~ 175°C | 1.8 V @ 10 A | ||
|
|
LSIC2SD120E30CCSCHOTTKY DIODE SIC 1200V 30A |
535 | 19.29 |
FFQ |
Datasheet |
Tube | Gen2 | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 920pF @ 1V, 1MHz | 0 ns | 100 µA @ 1200 V | 1200 V | 44A (DC) | -55°C ~ 175°C | 1.8 V @ 15 A | ||
|
DURF840DIODE GEN PURP 400V 8A ITO220AC |
20,000 | 1.65 |
FFQ |
Datasheet |
Tube | DUR | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 45 ns | 10 µA @ 400 V | 400 V | 8A | -55°C ~ 150°C | 1.3 V @ 8 A | ||
|
LSIC2SD120A05DIODE SCHOTTKY 1.2KV 17.5A TO220 |
162 | 3.58 |
FFQ |
Datasheet |
Tube | Gen2 | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Obsolete | Through Hole | 310pF @ 1V, 1MHz | 0 ns | 100 µA @ 1200 V | 1200 V | 17.5A (DC) | -55°C ~ 175°C | 1.8 V @ 5 A | ||
|
LSIC2SD065A06ASIC SCHOTTKY DIODE 650V 6A TO220 |
858 | 4.13 |
FFQ |
Datasheet |
Tube | Gen2 | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 300pF @ 1V, 1MHz | 0 ns | 50 µA @ 650 V | 650 V | 18.5A (DC) | -55°C ~ 175°C | 1.8 V @ 6 A | ||
|
LSIC2SD065D06ADIODE SCHOTTKY SIC 650V 6A |
738 | 4.13 |
FFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, GEN2 | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 300pF @ 1V, 1MHz | 0 ns | 50 µA @ 650 V | 650 V | 18.5A (DC) | -55°C ~ 175°C | 1.8 V @ 6 A | ||
|
LSIC2SD065C08ASIC SCHOTTKY DIODE 650V 8A TO252 |
2,398 | 4.98 |
FFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | Gen2 | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 415pF @ 1V, 1MHz | 0 ns | 50 µA @ 650 V | 650 V | 23A (DC) | -55°C ~ 175°C | 1.8 V @ 8 A | ||
|
|
LSIC2SD065A08ASIC SCHOTTKY DIODE 650V 8A TO220 |
1,031 | 5.13 |
FFQ |
Datasheet |
Tube | Gen2 | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 415pF @ 1V, 1MHz | 0 ns | 50 µA @ 650 V | 650 V | 23A (DC) | -55°C ~ 175°C | 1.8 V @ 8 A | ||
|
LSIC2SD120A08DIODE SIC SCHOTTKY 1200V 8A |
234 | 5.91 |
FFQ |
Datasheet |
Tube | Gen2 | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Obsolete | Through Hole | 454pF @ 1V, 1MHz | 0 ns | 100 µA @ 1200 V | 1200 V | 24.5A (DC) | -55°C ~ 175°C | 1.8 V @ 8 A | ||
|
|
LSIC2SD120A10DIODE SCHOTTKY 1.2KV 28A TO220-2 |
383 | 6.28 |
FFQ |
Datasheet |
Tube | Gen2 | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Obsolete | Through Hole | 582pF @ 1V, 1MHz | 0 ns | 100 µA @ 1200 V | 1200 V | 28A (DC) | -55°C ~ 175°C | 1.8 V @ 10 A | ||
|
|
LSIC2SD065A10ASIC SCHOTTKY DIOD 650V 10A TO220 |
1,018 | 6.34 |
FFQ |
Datasheet |
Tube | Gen2 | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 470pF @ 1V, 1MHz | 0 ns | 50 µA @ 650 V | 650 V | 27A (DC) | -55°C ~ 175°C | 1.8 V @ 10 A | ||
|
|
LSIC2SD065D10ADIODE SCHOTTKY SIC 650V 10A |
830 | 6.34 |
FFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, GEN2 | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 470pF @ 1V, 1MHz | 0 ns | 50 µA @ 650 V | 650 V | 27A (DC) | -55°C ~ 175°C | 1.8 V @ 10 A | ||
|
|
DUR6060WDIODE GEN PURP 600V 60A TO247AC |
314 | 6.46 |
FFQ |
Datasheet |
Tube | DUR | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 50 ns | 100 µA @ 600 V | 600 V | 60A | -55°C ~ 150°C | 2 V @ 60 A | ||
|
|
LSIC2SD065E12CCADIODE SCHOTTKY SIC 650V 6A DUAL |
500 | 7.39 |
FFQ |
Datasheet |
Tube | Automotive, AEC-Q101, GEN2 | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 300pF @ 1V, 1MHz | 0 ns | 50 µA @ 650 V | 650 V | 18.5A (DC) | -55°C ~ 175°C | 1.8 V @ 6 A | ||
|
|
DUR60120WDIODE GEN PURP 1.2KV 60A TO247AC |
3,812 | 7.63 |
FFQ |
Datasheet |
Tube | DUR | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 100 ns | 650 µA @ 1200 V | 1200 V | 60A | -55°C ~ 150°C | 3.5 V @ 60 A | ||
|
|
LSIC2SD065A16ASIC SCHOTTKY DIOD 650V 16A TO220 |
864 | 8.84 |
FFQ |
Datasheet |
Tube | Gen2 | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 730pF @ 1V, 1MHz | 0 ns | 50 µA @ 650 V | 650 V | 38A (DC) | -55°C ~ 175°C | 1.8 V @ 16 A | ||
|
|
LSIC2SD065D16ADIODE SCHOTTKY SIC 650V 16A |
825 | 8.84 |
FFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, GEN2 | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 730pF @ 1V, 1MHz | 0 ns | 50 µA @ 650 V | 650 V | 38A (DC) | -55°C ~ 175°C | 1.8 V @ 16 A | ||
|
|
LSIC2SD065E16CCADIODE SCHOTTKY SIC 650V 8A DUAL |
500 | 9.24 |
FFQ |
Datasheet |
Tube | Automotive, AEC-Q101, GEN2 | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 415pF @ 1V, 1MHz | 0 ns | 50 µA @ 650 V | 650 V | 23A (DC) | -55°C ~ 175°C | 1.8 V @ 8 A | ||
|
|
LSIC2SD065A20ASIC SCHOTTKY DIOD 650V 20A TO220 |
886 | 10.40 |
FFQ |
Datasheet |
Tube | Gen2 | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 960pF @ 1V, 1MHz | 0 ns | 50 µA @ 650 V | 650 V | 45A (DC) | -55°C ~ 175°C | 1.8 V @ 20 A | ||
|
D4015LTPDIODE GEN PURP 400V 9.5A TO220 |
940 | 2.32 |
FFQ |
Datasheet |
Tube | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 4 µs | 10 µA @ 400 V | 400 V | 9.5A | -40°C ~ 125°C | 1.6 V @ 9.5 A |
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