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Photo Mfr. Part # Availability Price Quantity Datasheet Packaging Series RoHS Speed Diode Type Part Status Mounting Type Package / Case Capacitance @ Vr, F Supplier Device Package Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature - Junction Voltage - Forward (Vf) (Max) @ If
IV1D06006P3

IV1D06006P3

SIC DIODE, 650V 6A, DPAK

Inventchip

2,500 4.52
- +

FFQ

IV1D06006P3

Datasheet

Tape & Reel (TR),Cut Tape (CT) RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Surface Mount 224pF @ 1V, 1MHz 0 ns 10 µA @ 650 V 650 V 16.7A (DC) -55°C ~ 175°C 1.65 V @ 6 A
IV1D12010T2

IV1D12010T2

SIC DIODE, 1200V 10A, TO-247-2

Inventchip

120 11.78
- +

FFQ

IV1D12010T2

Datasheet

Tube RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 575pF @ 1V, 1MHz 0 ns 50 µA @ 1200 V 1200 V 30A (DC) -55°C ~ 175°C (TJ) 1.8 V @ 10 A
IV1D12010O2

IV1D12010O2

SIC DIODE, 1200V 10A, TO-220-2

Inventchip

200 11.78
- +

FFQ

IV1D12010O2

Datasheet

Tube RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 575pF @ 1V, 1MHz 0 ns 50 µA @ 1200 V 1200 V 28A (DC) -55°C ~ 175°C (TJ) 1.8 V @ 10 A
IV1D12015T2

IV1D12015T2

SIC DIODE, 1200V 15A, TO-247-2

Inventchip

120 14.55
- +

FFQ

IV1D12015T2

Datasheet

Tube RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 888pF @ 1V, 1MHz 0 ns 80 µA @ 1200 V 1200 V 44A (DC) -55°C ~ 175°C 1.8 V @ 15 A
IV1D06006O2

IV1D06006O2

SIC DIODE, 650V 6A, TO-220-2

Inventchip

200 4.37
- +

FFQ

IV1D06006O2

Datasheet

Tube RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 212pF @ 1V, 1MHz 0 ns 10 µA @ 650 V 650 V 17.4A (DC) -55°C ~ 175°C 1.65 V @ 6 A
IV1D12005O2

IV1D12005O2

SIC DIODE, 1200V 5A, TO-220-2

Inventchip

200 6.54
- +

FFQ

IV1D12005O2

Datasheet

Tube RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 320pF @ 1V, 1MHz 0 ns 30 µA @ 1200 V 1200 V 17A (DC) -55°C ~ 175°C 1.8 V @ 5 A
IV1D12020T2

IV1D12020T2

SIC DIODE, 1200V 20A, TO-247-2

Inventchip

120 19.17
- +

FFQ

IV1D12020T2

Datasheet

Tube RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 1114pF @ 1V, 1MHz 0 ns 120 µA @ 1200 V 1200 V 54A -55°C ~ 175°C 1.8 V @ 20 A
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